Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon
نویسندگان
چکیده
A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon ~ta-C! on Si has been carried out. Complete stress relief occurs at 600–700 °C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp sites to sp with a drastic change occurring after 1100 °C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics. @S0021-8979~99!05910-1#
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